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Author Shengjun Zhou

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DNA methylation of AHCY may increase the risk of ischemic stroke.

Lei Zhao, Xiaosheng Chen, Shengjun Zhou, Zhiqing Lin, Xi Yu, Yi Huang,

Genetic factors play an important role in the pathogenesis of ischemic stroke. Of these, epigenetic modifications provide a new direction for the study of ischemic stroke pathogenesis. This study aimed to determine the correlation between DNA methylation of the gene encoding S-adenosylhomocysteine hydrolase (AHCY) and the risk of ischemic stroke ... Read more >>

Bosn J Basic Med Sci (Bosnian journal of basic medical sciences)
[2020, 20(4):471-476]

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Pharmacological Activation of RXR-α Promotes Hematoma Absorption in a PPAR-γ-Dependent Pathway After Intracerebral Hemorrhage

Chaoran Xu, Huaijun Chen, Shengjun Zhou, Chenjun Sun, Xiaolong Xia, Yucong Peng, Jianfeng Zhuang, Xiongjie Fu, Hanhai Zeng, Hang Zhou, Jianru Li, Yang Cao, Qian Yu, Yin Li, Guoyang Zhou, Peiyu Huang, Feng Yan, Gao Chen,

Abstract Background: Endogenously eliminating the hematoma is a favorable strategy in addressing intracerebral hemorrhage (ICH). This study sought to determine the role of retinoid X receptor-α (RXR-α) in the context of hematoma absorption after ICH. Methods: ICH mouse models were established by the stereotactic injection of autologous arterial blood into ... Read more >>

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Comparative transcriptomic analyses of powdery mildew resistant and susceptible cultivated cucumber (Cucumis sativus L.) varieties to identify the genes involved in the resistance to Sphaerotheca fuliginea infection.

Peng Zhang, Yuqiang Zhu, Shengjun Zhou,

Background:Cucumber (Cucumis sativus L.) is a widely cultivated vegetable crop, and its yield and quality are greatly affected by various pathogen infections. Sphaerotheca fuliginea is a pathogen that causes powdery mildew (PM) disease in cucumber. However, the genes involved in the resistance to PM in cucumber are largely unknown. Methods:In ... Read more >>

PeerJ (PeerJ)
[2020, 8:e8250]

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Methylation of Phospholipase A2 Group VII Gene Is Associated with Brain Arteriovenous Malformations in Han Chinese Populations.

Yuchun Liu, Xizheng Wu, Sheng Nie, Shengjun Zhou, Shuyuan Xiao, Xiang Gao, Zhiqing Lin, Jie Sun, Yi Huang,

The purpose of this study was to evaluate the contribution of DNA methylation at the phospholipase A2 group VII (PLA2G7) gene, to the risk of developing brain arteriovenous malformations (BAVMs) and intracranial aneurysms (IAs) in a Han Chinese population. Seventy patients with BAVMs or IAs and 26 control subjects were ... Read more >>

J Mol Neurosci (Journal of molecular neuroscience : MN)
[2020, 70(7):1056-1063]

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Scattering force and heating effect in laser-induced plasmonic welding of silver nanowire junctions.

Hui Wan, Chengqun Gui, Dong Chen, Jiaohao Miao, Qiang Zhao, Shiyi Luan, Shengjun Zhou,

Light-nanomaterial interaction is accompanied by a scattering force and a heating effect. When silver nanowires are irradiated by a laser pulse with light intensity above the melting threshold, they are observed to melt into nanospheres and fly away from their original position. Simulation and experimental results show that the localized ... Read more >>

Appl Opt (Applied optics)
[2020, 59(7):2186-2191]

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Adaptive Nonlinearity Compensation System for Integrated Temperature and Moisture Sensor.

Guohong Chen, Shengjun Zhou, Jie Ni, Hao Huang,

Measuring temperature and moisture are important in many scenarios. It has been verified that temperature greatly affects the accuracy of moisture sensing. Moisture sensing performance would suffer without temperature calibrations. This paper introduces a nonlinearity compensation technique for temperature-dependent nonlinearity calibration of moisture sensors, which is based on an adaptive ... Read more >>

Micromachines (Basel) (Micromachines)
[2019, 10(12):]

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Light Extraction Analysis of AlGaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method.

Shuyu Lan, Hui Wan, Jie Zhao, Shengjun Zhou,

Micro-scale light emitting diodes (micro-LEDs) commonly employ a thin-film flip-chip (TFFC) structure whose substrate is lifted off by an excimer laser. However, flip-chip (FC) micro-LEDs with a substrate can provide a sharp rise on sidewall emission by increasing the sidewall area. Here, we investigate the influence of substrate thickness, encapsulation, ... Read more >>

Micromachines (Basel) (Micromachines)
[2019, 10(12):]

Cited: 1 time

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High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate.

Shengjun Zhou, Haohao Xu, Bin Tang, Yingce Liu, Hui Wan, Jiahao Miao,

High-power and reliable GaN-based vertical light-emitting diodes (V-LEDs) on 4-inch silicon substrate were fabricated and characterized in this article. The metallization scheme reliability was improved by depositing the Pt/Ti films that surround the compressed Ag/TiW films to protect it from environmental humidity. We demonstrated that although current crowding in V-LEDs ... Read more >>

Opt Express (Optics express)
[2019, 27(20):A1506-A1516]

Cited: 2 times

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Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

Jie Zhao, Hongpo Hu, Yu Lei, Hui Wan, Liyan Gong, Shengjun Zhou,

High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN ... Read more >>

Nanomaterials (Basel) (Nanomaterials (Basel, Switzerland))
[2019, 9(11):]

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Highly efficient GaN-based high-power flip-chip light-emitting diodes.

Shengjun Zhou, Xingtong Liu, Han Yan, Zhiwen Chen, Yingce Liu, Sheng Liu,

High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is possible to improve both the light extraction efficiency (LEE) and current spreading of an FCLED by incorporating a highly reflective metallic reflector made from ... Read more >>

Opt Express (Optics express)
[2019, 27(12):A669-A692]

Cited: 3 times

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Methylation of the CDKN2A Gene Increases the Risk of Brain Arteriovenous Malformations.

Xiaosheng Chen, Yuchun Liu, Shengjun Zhou, Sheng Nie, Zhiqin Lin, Chenhui Zhou, Jie Sun, Xiang Gao, Yi Huang,

Brain arteriovenous malformations (BAVMs) and intracranial aneurysms (IAs) are the results of a combination of genetic and environmental factors. Epigenetic factors also play an important role in the pathogenesis of these disorders. The aim of this study was to determine the effect of DNA methylation at the cyclin-dependent kinase inhibitor ... Read more >>

J Mol Neurosci (Journal of molecular neuroscience : MN)
[2019, 69(2):316-323]

Cited: 2 times

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High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate.

Qiang Zhao, Jiahao Miao, Shengjun Zhou, Chengqun Gui, Bin Tang, Mengling Liu, Hui Wan, Jinfeng Hu,

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au-In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high ... Read more >>

(Nanomaterials (Basel, Switzerland))
[2019, 9(8):]

Cited: 1 time

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Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.

Hui Wan, Bin Tang, Ning Li, Shengjun Zhou, Chengqun Gui, Sheng Liu,

We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching ... Read more >>

(Nanomaterials (Basel, Switzerland))
[2019, 9(3):]

Cited: 1 time

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Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall.

Bin Tang, Jia Miao, Yingce Liu, Hui Wan, Ning Li, Shengjun Zhou, Chengqun Gui,

Current solutions for improving the light extraction efficiency of flip-chip light-emitting diodes (LEDs) mainly focus on relieving the total internal reflection at sapphire/air interface, but such methods hardly affect the epilayer mode photons. We demonstrated that the prism-structured sidewall based on tetramethylammonium hydroxide (TMAH) etching is a cost-effective solution for ... Read more >>

Nanomaterials (Basel) (Nanomaterials (Basel, Switzerland))
[2019, 9(3):]

Cited: 6 times

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Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.

Hongpo Hu, Shengjun Zhou, Hui Wan, Xingtong Liu, Ning Li, Haohao Xu,

Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered AlN (19 nm)/template has better crystal quality while larger in-plane compressive ... Read more >>

Sci Rep (Scientific reports)
[2019, 9(1):3447]

Cited: 3 times

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Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing.

Jie Zhao, Xinghuo Ding, Jiahao Miao, Jinfeng Hu, Hui Wan, Shengjun Zhou,

A patterned double-layer indium-tin oxide (ITO), including the first unpatterned ITO layer serving as current spreading and the second patterned ITO layer serving as light extracting, was applied to obtain uniform current spreading and high light extraction efficiency (LEE) of GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Periodic pinhole patterns were ... Read more >>

(Nanomaterials (Basel, Switzerland))
[2019, 9(2):]

Cited: 5 times

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Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes.

Shengjun Zhou, Haohao Xu, Mengling Liu, Xingtong Liu, Jie Zhao, Ning Li, Sheng Liu,

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric TiO₂/SiO₂ DBR on optical and electrical characteristics of FCLEDs. The reflector consisting of two single TiO₂/SiO₂ DBR stacks optimized for different central wavelengths demonstrates a broader ... Read more >>

(Micromachines)
[2018, 9(12):]

Cited: 2 times

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An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.

Mengling Liu, Jie Zhao, Shengjun Zhou, Yilin Gao, Jinfeng Hu, Xingtong Liu, Xinghuo Ding,

Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-pits-embedded InGaN/GaN SL on optical and electrical properties of GaN-based ... Read more >>

(Nanomaterials (Basel, Switzerland))
[2018, 8(7):]

Cited: 6 times

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The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.

Shengjun Zhou, Xingtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao, Zhijue Quan, Chengqun Gui, Sheng Liu,

The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple quantum wells (MQWs) is known to increase ... Read more >>

Sci Rep (Scientific reports)
[2018, 8(1):11053]

Cited: 4 times

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Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs.

Xingtong Liu, Shengjun Zhou, Yilin Gao, Hongpo Hu, Yingce Liu, Chengqun Gui, Sheng Liu,

We demonstrate a GaN-based flip-chip LED (FC-LED) with a highly reflective indium-tin oxide (ITO)/distributed Bragg reflector (DBR) ohmic contact. A transparent ITO current spreading layer combined with Ta2O5/SiO2 double DBR stacks is used as a reflective p-type ohmic contact in the FC-LED. We develop a strip-shaped SiO2 current blocking layer, ... Read more >>

Appl Opt (Applied optics)
[2017, 56(34):9502-9509]

Cited: 2 times

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Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

Shengjun Zhou, Xingtong Liu, Yilin Gao, Yingce Liu, Mengling Liu, Zongyuan Liu, Chengqun Gui, Sheng Liu,

We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N2 ambient. A TiW diffusion barrier ... Read more >>

Opt Express (Optics express)
[2017, 25(22):26615-26627]

Cited: 6 times

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Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes.

Hongpo Hu, Shengjun Zhou, Xingtong Liu, Yilin Gao, Chengqun Gui, Sheng Liu,

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by ... Read more >>

Sci Rep (Scientific reports)
[2017, 7:44627]

Cited: 14 times

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Reflectance bandwidth and efficiency improvement of light-emitting diodes with double-distributed Bragg reflector.

Xinghuo Ding, Chengqun Gui, Hongpo Hu, Mengling Liu, Xingtong Liu, Jiajiang Lv, Shengjun Zhou,

Distributed Bragg reflectors (DBR) with metal film on the bottom have been demonstrated to further improve the light output power of GaN-based light-emitting diodes (LEDs). Periods of TiO2/SiO2 stacks, thickness of metal film, and material of metallic reflector were designed and optimized in simulation software. The maximal bandwidth of double-DBR ... Read more >>

Appl Opt (Applied optics)
[2017, 56(15):4375-4380]

Cited: 1 time

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DNA Methylation of the PDGFD Gene Promoter Increases the Risk for Intracranial Aneurysms and Brain Arteriovenous Malformations.

Shengjun Zhou, Xiang Gao, Jie Sun, Zhiqing Lin, Yi Huang,

The aim of this study was to determine the role of DNA methylation of the platelet-derived growth factor-D (PDGFD) gene promoter in the development of intracranial aneurysms (IAs) and brain arteriovenous malformations (BAVMs). A total of 70 patients with IAs or BAVMs and 26 control individuals were enrolled for this ... Read more >>

DNA Cell Biol. (DNA and cell biology)
[2017, 36(6):436-442]

Cited: 0 times

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Association study of BUD13-ZNF259 gene rs964184 polymorphism and hemorrhagic stroke risk.

Shengjun Zhou, Jikuang Zhao, Zhepei Wang, Keqin Li, Sheng Nie, Feng Gao, Jie Sun, Xiang Gao, Yi Huang,

We aimed to evaluate the association of rs964184 of BUD13-ZNF259 gene with the risk of hemorrhagic stroke (HS). A total of 138 HS cases and 587 controls were recruited for the association of rs964184 of BUD13-ZNF259 gene with the risk of HS. Tm shift PCR was used for genotyping. We ... Read more >>

(International journal of clinical and experimental medicine)
[2015, 8(12):22503-22508]

Cited: 2 times

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